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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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Wide-bandwidth (8 MHz) rail to rail input/output 5 V CMOS small offset, single operational amplifier
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Transition mode (TM) PFC with X-cap discharge and LLC resonant combo controller
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Mainstream Mixed signals MCUs Arm Cortex-M4 core with DSP and FPU, 64 Kbytes of Flash memory, 72 MHz