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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed