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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT in an H2PAK-7 package
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N-channel 1000 V, 6.25 Ohm typ., 1.85 A SuperMESH Power MOSFET in a TO-220 package
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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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N-channel 100 V, 5.1 mOhm typ., 110 A STripFET F7 Power MOSFET in TO-220 package
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1200 V, 8 A trench gate field-stop M series low-loss IGBT die in D7 packing
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N-channel 525 V, 1.25 Ohm, 4.4 A, UltraFASTmesh Power MOSFET in a DPAK package
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Automotive-grade N-channel 40 V, 2.5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
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N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package
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N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
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P-channel 60 V, 0.023 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package