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Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing
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N-channel 300 V, 63 mOhm typ., 42 A STripFET II Power MOSFET in a TO-220 package
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N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
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N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 60 V, 6.8 mOhm typ., 40 A STripFET F7 Power MOSFET in a DPAK package
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N-channel 600 V, 280 mOhm typ., 12 A MDmesh M2 Power MOSFET in a DPAK package
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N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
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Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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Automotive-grade trench gate field-stop IGBT M series, 650 V, 30 A low-loss M series IGBT in an HU3P