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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
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Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1 MByte Flash, 564 KBytes RAM, 550 MHz
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N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
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N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220FP package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 2MBytes of Flash memory, 692KB RAM, 480
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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220 package