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N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package
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N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in TO-220FP package
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1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D7 packing
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N-channel 600 V, 220 mOhm typ., 10 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package