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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MO
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Automotive-grade N-channel 40 V, 1.6 mOhm typ., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 packag
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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheelin
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 pa
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N-channel 55 V, 12 mOhm, 60 A STripFET II Power MOSFET in a DPAK package
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N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-247 package
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
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N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package