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N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in DPAK package
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1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D7 packing
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N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 package
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N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
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High-performance advanced line, Arm Cortex-M4 core with DSP and FPU, 512 Kbytes of Flash memory, 180
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1MBytes of Flash memory, 1376 KB SRAM,
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N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in IPAK package
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High-performance Arm Cortex-M3 MCU with 1 Mbyte of Flash memory, 120 MHz CPU, ART Accelerator
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High-performance Arm Cortex-M3 MCU with 512 Kbytes of Flash memory, 120 MHz CPU, ART Accelerator, Et