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N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing
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N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in IPAK package
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N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package
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Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT in a TO-247 long leads package
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N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-220FP package
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High-performance and DSP with FPU, Arm Cortex-M7 MCU with 512 Kbytes of Flash memory, 216 MHz CPU, A
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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 168
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High-performance advanced line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 180 MH
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High-performance and DSP with DP-FPU, Arm Cortex-M7 + Cortex-M4 MCU with 2MBytes of Flash memory, 1M