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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing
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N-channel 400 V, 0.49 Ohm typ., 9 A SuperMESH Power MOSFET in TO-220FP package
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N-channel 800 V, 0.65 Ohm typ., 10.5 A SuperMESH Power MOSFET in a TO-220 package
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N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220FP package
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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 256 Kbytes of Flash memory, 1
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Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
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N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220 package
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High-performance advanced line, Arm Cortex-M4 core with DSP and FPU, 2 Mbytes of Flash memory, 180 M
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N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in an IPAK package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1 MByte Flash, 564 KBytes RAM, 550 MHz