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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 512 Kbytes of Flash memory, 1
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High-performance access line, Arm Cortex-M4 core with DSP and FPU, 128 Kbytes of Flash memory, 84 MH
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Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package
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N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing
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N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in IPAK package
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N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package
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Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT in a TO-247 long leads package