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Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
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Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 packag
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N-channel 800 V, 2.8 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package
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Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
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N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in an I2PAK package
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N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a D2PAK package
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N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads
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N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in an IPAK package