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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HiP247-4 package
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N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package
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N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK package
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N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in a TO-220 package