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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing
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N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
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High-performance access line, Arm Cortex-M4 core with DSP and FPU, 384 Kbytes of Flash memory, 84 MH
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N-channel 800 V, 0.65 Ohm typ., 10.5 A SuperMESH Power MOSFET in a TO-220 package
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High-performance and DSP with FPU, Arm Cortex-M7 MCU with 512 Kbytes of Flash memory, 216 MHz CPU, A
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N-channel 1050 V, 8 Ohm typ., 1.4 A SuperMESH3(TM) Power MOSFET in TO-3PF package
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High-performance and DSP with FPU, Arm Cortex-M7 MCU with 512 Kbytes of Flash memory, 216 MHz CPU, A
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 2MBytes of Flash memory, 1MB RAM, 480 M
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 128 Kbytes of Flash memory, 1MB RAM, 48
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Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package