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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 512 Kbytes of Flash memory, 1
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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Automotive-grade N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 pa
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N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 package
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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
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Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package
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N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in DPAK package