STGAP2SICSC

STGAP2SICSC

STGAP2SICSCTR

STGAP2SICSCTR

STGAP2SICSTR

Active

Galvanically isolated 4 A single gate driver for SiC MOSFETs

Quantity $ per Unit Savings
1 - 9$3.240%
10 - 24$2.9110%
25 - 99$2.7515%
100 - 249$2.3926%
250 - 499$2.2630%
500$2.0437%
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Out of stock
$3.24
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameSO 8 WIDE 300
Key features
  • High voltage rail up to 1200 V
  • Driver current capability: 4 A sink/source @25°C
  • dV/dt transient immunity ±100 V/ns in full temperature range
  • Overall input-output propagation delay: 75 ns
  • Separate sink and source option for easy gate driving configuration
  • 4 A Miller CLAMP dedicated pin option
  • UVLO function
  • Gate driving voltage up to 26 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shut-down protection
  • Standby function
  • 6 kV galvanic isolation
  • Wide body SO-8W package