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RF2L27015CG2

Out of Stock

15 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor

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RoHs compliantN/A
Package NameE2
ECCN USEAR99
ECCN EUNEC

$42.88|500u

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- Data sheet
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RF3L05250CB4

Out of Stock

250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

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RoHs compliantN/A
Package NameLBB
ECCN USEAR99
ECCN EUNEC

$153.04|1u

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PD57060-E

In Stock

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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RoHs compliantEcopack2
Package NamePowerSO-10RF (formed lead)
ECCN USEAR99
ECCN EUNEC

$46.11|500u
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- Material Declaration
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STDRIVEG600TR

In Stock

High voltage half-bridge gate driver for GaN transistors

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Operating Temp Max Celsius150.0
RoHs compliantEcopack2
Operating Temp Min Celsius-40.0
Package NameSO-16

$1.28|500u
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- Material Declaration
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STGAP2GSC

Out of Stock

Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

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Operating Temp Max Celsius125.0
RoHs compliantEcopack2
Operating Temp Min Celsius-40.0
Package NameSO 8 WIDE 300

$3.76|500u

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- Data sheet
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ST33HTPH2X32AHE4

In Stock

Long-term evolution TPM 2.0 device with an SPI interface

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Operating Temp Max Celsius70.0
RoHs compliantEcopack2
Operating Temp Min Celsius0.0
Package NameVFQFPN 32 5x5x1.0 mm

$2.27|500u
- Data sheet
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SD57030

Out of Stock

RF power transistor, the LdmoST family

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RoHs compliantEcopack1
Package NameM243
ECCN USEAR99
ECCN EUNEC

$57.41|500u

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RF3L05150CB4

Out of Stock

150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

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RoHs compliantN/A
Package NameLBB
ECCN USEAR99
ECCN EUNEC

$175.31|1u

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- Data sheet
- Material Declaration
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PD57018-E

In Stock

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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RoHs compliantEcopack2
Package NamePowerSO-10RF (formed lead)
ECCN USEAR99
ECCN EUNEC

$21.43|500u
- Data sheet
- Material Declaration
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STSAFA110S8SPL02

In Stock

Authentication, state-of-the-art security for peripherals and IoT devices

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RoHs compliantN/A
Package NameSO-8
Supply Voltage Min Volt1.8
Supply Voltage Max Volt5.5

$1.43|500u