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3.3 V Powered, 15 kV ESD protected, up to 12 Mbps RS-485/RS-422 transceiver, [-40oC, 85oC] temperatu
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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1MByte of Flash memory, 1MB RAM, 480 MH
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)