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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 package
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package