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Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO-LL package
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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D7 packing
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Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package
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N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in an IPAK package
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N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package
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N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-220FP package
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Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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N-channel 800 V, 1.45 Ohm typ., 3 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package
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Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package