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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
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MEMS digital output motion sensor: ultra-low-power high-performance 3-axis "femto" accelerom
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Automotive-grade N-channel 40 V, 1.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 packag
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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N-channel 40 V, 0.0021 Ohm typ., 120 A STripFET F6 Power MOSFET in TO-220 package
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Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package
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N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in TO-220 package