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Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MO
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Automotive-grade silicon carbide Power MOSFET 750 V, 22 mOhm typ., 85 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an H2PAK-2 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package