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N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in H2PAK-2 package
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1 Mbit Serial I2C bus EEPROM with configurable device address and software write protection register
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Trench gate field-stop 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
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N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package
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Very high accuracy (5 uV) zero drift 5 V CMOS Op-Amp, single, GBP=400kHz
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Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packin