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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package