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Galvanically isolated 4 A single gate driver for SiC MOSFETs
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650 V power Schottky silicon carbide diode
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600 V, 15 A Turbo 2 Ultrafast Diode
High Voltage Ultrafast Rectifier Diode
Energy Saving Off-line High Voltage Converter
300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
600 V, 30 A Turbo 2 Ultrafast Diode