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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package