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1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
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N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
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Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
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N-channel 600 V, 320 mOhm typ., 10 A MDmesh M6 Power MOSFET in a DPAK package
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Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
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N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra narrow leads package
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N-channel 500 V, 0.48 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220 package
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N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in DPAK package