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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
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N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220 package
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3.3V powered, 15kV ESD protected, up to 12Mbps true RS-485/RS-422 transceiver
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±15kV ESD protection 3 to 5.5V low power, up to 250kbps, RS-232 drivers and receivers