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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an HU3PAK package
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 750 V, 29 mOhm typ., 60 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage
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Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A in an HU3PAK package
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Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package