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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MO
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Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HU3PAK package
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Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package
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Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package