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AI accelerated compute server
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Active
SCTW35N65G2V
In Stock
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
- Ecopack2
- HIP247
- EAR99
- NEC
-
NRND
SCT20N120H
In Stock
Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an H2PAK-2 package
- Ecopack2
- H2PAK-2
- EAR99
- NEC
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NRND
SCTWA30N120
In Stock
Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 long leads package
- Ecopack2
- HIP247 long leads
- EAR99
- NEC
-
NRND
SCTH90N65G2V-7
In Stock
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
- Ecopack2
- H2PAK-7
- EAR99
- NEC
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Active
SCT040TO65G3
In Stock
Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- Ecopack2
- TO-LL
- EAR99
- NEC
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Active
SCT060HU75G3AG
In Stock
Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package
- Ecopack1
- HU3PAK
- EAR99
- NEC
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Active
SCT040W120G3
Out of Stock
Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- Ecopack2
- HIP247
- EAR99
- NEC
-
Active
SCTHC250N120G3AG
Out of Stock
Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage
- Ecopack2
- STPAK HC
- EAR99
- NEC
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Active
LIS2DE12TR
In Stock
MEMS digital output motion sensor: ultra-low-power high-performance 3-axis "femto" accelerom
- 85.0
- Ecopack2
- -40.0
- LGA 12L 2.0x2.0x1 mm
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Active
SCTWA90N65G2V
In Stock
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
- Ecopack2
- HIP247 long leads
- EAR99
- NEC
