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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 pa
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Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
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Dynamic NFC/RFID tag IC with 64-Kbit EEPROM, and fast transfer mode capability
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Automotive-grade dual N-channel 30 V, 0.016 Ohm typ., 11 A STripFET H5 Power MOSFET in a PowerFLAT 5
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N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package
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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
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Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package