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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
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N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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Automotive-grade N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package
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N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an IPAK package
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N-channel 40 V, 0.85 mOhm max., 350 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package