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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package
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Automotive-grade silicon carbide Power MOSFET 750 V, 29 mOhm typ., 60 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
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Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 package