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Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
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N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-6 package
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Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
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Low-power, high-sensitivity infrared (IR) sensor for presence and motion detection
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Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET in an HU3PAK package
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16 channels ±100 V, ±2/4 A, 5/3-level RTZ, high-speed ultrasound pulser with integrated tr
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Dual channel ±100 V, high voltage 3 A linear amplifier and 2 A pulser transmitter
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64-channel (±100 V / -200 to 0 V / 0 to 200 V), low harmonic distortion, highvoltage analog ind
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Quad ±90 V, ±2 A, 3/5 level, ESD-enhanced high-speed ultrasound pulser