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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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Ultra-low-power with FPU Arm Cortex-M4 MCU 80 MHz with 128 Kbytes of Flash memory
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Wide-bandwidth (8 MHz) rail-to-rail input/output 5 V CMOS single operational amplifier
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 2MBytes of Flash memory, 1MB RAM, 480 M