Industrial

SCTH35N65G2V-7 Datasheet (PDF)

SCTH35N65G2V-7

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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-7

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$15.92	0%
10	$15.69	2%
10 +	Contact Sales

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SCTW90N65G2V

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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHIP247

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$35.56	0%
10	$32.80	8%
10 +	Contact Sales

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SCT20N120H

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Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-2

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$15.94	0%
10	$14.66	8%
10 +	Contact Sales

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SCT10N120

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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHIP247

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$11.55	0%
10 - 99	$10.45	10%
100 - 160	$8.64	25%
160 +	Contact Sales

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STGB10NB40LZT4

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Automotive-grade 10 A, 410 V internally clamped IGBT
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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameD2PAK

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$2.83	0%
10 - 24	$2.55	10%
25 - 99	$2.41	15%
100 - 499	$2.05	28%
500	$1.69	40%
500 +	Contact Sales

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STGW20H60DF

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600 V, 20 A high speed trench gate field-stop IGBT
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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$3.06	0%
10 - 24	$2.74	10%
25 - 99	$2.67	13%
100 - 500	$2.25	26%
500 +	Contact Sales

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STGB15H60DF

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Trench gate field-stop IGBT, H series 600 V, 15 A high speed
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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$2.54	0%
10 - 24	$2.28	10%
25 - 99	$2.22	13%
100 - 499	$1.83	28%
500	$1.51	41%
500 +	Contact Sales

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STGD5H60DF Datasheet (PDF)

STGD5H60DF

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Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$1.14	0%
10 - 24	$1.03	10%
25 - 99	$0.98	14%
100 - 499	$0.80	30%
500	$0.66	42%
500 +	Contact Sales

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STGP15H60DF Datasheet (PDF)

STGP15H60DF

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Trench gate field-stop IGBT, H series 600 V, 15 A high speed
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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$2.14	0%
10 - 99	$1.92	10%
100	$1.54	28%
100 +	Contact Sales

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LD1117S33TR

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Adjustable and fixed low drop positive voltage regulator
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Parameter NameParameter Value
Operating RangeCommercial
Operating Temp Min Celsius0.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSOT-223

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$0.66	0%
10 - 99	$0.56	16%
100 - 300	$0.38	42%
300 +	Contact Sales

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Active

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package Learn More

Active

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package Learn More

Active

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package Learn More

Active

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package Learn More

Active

Automotive-grade 10 A, 410 V internally clamped IGBT Learn More

Active

600 V, 20 A high speed trench gate field-stop IGBT Learn More

Active

Trench gate field-stop IGBT, H series 600 V, 15 A high speed Learn More

Active

Trench gate field-stop IGBT, H series 600 V, 5 A high speed Learn More

Active

Trench gate field-stop IGBT, H series 600 V, 15 A high speed Learn More

Active

Adjustable and fixed low drop positive voltage regulator Learn More

Featured

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
Learn More

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Learn More

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Learn More

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Learn More

Automotive-grade 10 A, 410 V internally clamped IGBT
Learn More

600 V, 20 A high speed trench gate field-stop IGBT
Learn More

Trench gate field-stop IGBT, H series 600 V, 15 A high speed
Learn More

Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Learn More

Trench gate field-stop IGBT, H series 600 V, 15 A high speed
Learn More

Adjustable and fixed low drop positive voltage regulator
Learn More