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Automotive-grade silicon carbide Power MOSFET 1700 V, 55 mOhm typ., 48 A in an HiP247 package
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Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HU3PAK package
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Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
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Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MO
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Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
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Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247 package