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Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long leads package
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N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 0.8 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package
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N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package
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Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
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N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package
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Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
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N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
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N-channel 900 V, 280 mOhm typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package