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Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT in a TO-247 long leads package
N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package
N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET in a TO-220 package
N-channel 800 V, 13 Ohm typ., 1 A SuperMESH Power MOSFET in a DPAK package
N-channel enhancement mode standard level 100 V, 4.6 mOhm max., 125 A STripFET F8 Power MOSFET in a
650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode
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N-channel 650 V, 132 mOhm typ., 20 A MDmesh M9 Power MOSFET in a DPAK package
Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 packag
