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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 237 A in a STPAK package
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package
Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
N-channel 650 V, 132 mOhm typ., 20 A MDmesh M9 Power MOSFET in a DPAK package
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
