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Automotive-grade N-channel 300 V, 280 mOhm typ., 10 A, STripFET II Power MOSFET in a DPAK package
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Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing
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N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-220FP package
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N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package
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Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package