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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheelin
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P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package
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N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
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N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package
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Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
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N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a DPAK package
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N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220FP, Zener-protected SuperMESH3; Power MOSFET