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Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
Trench gate field-stop 650 V, 30 A low-loss M series IGBT die in D7 packing
Trench gate field-stop 1200 V, 40 A low loss M series IGBT die in D7 packing
Trench gate field-stop 650 V, 15 A low-loss M series IGBT die in D7 packing
1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing
Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
650 V, 20 A trench gate field-stop M series low loss IGBT in D7 packing
