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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in D7 packing
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P-channel -100 V, 0.136 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package
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N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package
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N-channel 500 V, 300 mOhm typ., 12 A MDmesh Power MOSFET in a TO-220FP package
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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT in an H2PAK-7 package
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N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
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N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in TO-220FP package