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Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
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Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
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N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package
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Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long leads package
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Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-220 package
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N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package
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Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long lead
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N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a TO-247 package
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N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a TO-220 package